MTP75N06HD Datasheet - Motorola

MTP75N06HD TMOS POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP75N06HD/D Designer's HDTMOS E-FET ™ High Density Power FET N Channel Enhancement Mode Silicon Gate This advanced high cell density HDTMOS E FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain to source diode with a fast recovery time. Designed for low voltage, high speed switching appl.

MTP75N06HD Features

* owever, snubbing reduces switching losses. 7000 6000 VDS = 0 V Ciss VGS = 0 V TJ = 25°C C, CAPACITANCE (pF) 5000 4000 3000 2000 Coss 1000 Crss 0 10 5 VGS 0 VDS 5 10 15 20 25 Ciss Crss GATE

* TO

* SOURCE OR DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Vari

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