* owever, snubbing reduces switching losses. 7000 6000 VDS = 0 V Ciss VGS = 0 V TJ = 25°C C, CAPACITANCE (pF) 5000 4000 3000 2000 Coss 1000 Crss 0 10 5 VGS 0 VDS 5 10 15 20 25 Ciss Crss GATE
* TO
* SOURCE OR DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Vari
MTP75N06HD Datasheet (220.66 KB)
MTP75N06HD
Motorola
220.66 KB
Tmos power fet.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Designer's
HDTMOS E-FET ™ High Density Power FET N
*Channel Enhan.
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