MTP75N06HD TMOS POWER FET

Motorola

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP75N06HD/D Designer's HDTMOS E-FET ™ High Density Power FET N *Channel Enhan.

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Datasheet Specifications

Part number: MTP75N06HD
Manufacturer: Motorola
File Size: 220.66 KB
Datasheet: MTP75N06HD_Motorola.pdf
Description: TMOS POWER FET

Features

* owever, snubbing reduces switching losses. 7000 6000 VDS = 0 V Ciss VGS = 0 V TJ = 25°C C, CAPACITANCE (pF) 5000 4000 3000 2000 Coss 1000 Crss 0 10 5 VGS 0 VDS 5 10 15 20 25 Ciss Crss GATE
* TO
* SOURCE OR DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Vari

Applications

* in power supplies, converters and PWM motor controls, and inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs www. DataSheet4U. com where inductive loads are switched, and to offer additional safety margin against unexpected voltage transients.

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MTP75N06HD TMOS POWER FET Motorola

Motorola MTP75N06HD-like datasheet