* VGS 16 12 8 4 0 70 20 28 24 10000 TJ = 25°C ID = 75 A VDD = 15 V VGS = 5 V VDS , DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) t, TIME (ns) 1000 tr 100 tf td(off) td(on) 10 1 10 RG, GATE RESISTANCE (OHMS) 100 www.DataSheet4U.com Figure 8. Gate
* To
* Source and Drain
* To
MTP75N03HDL Datasheet (193.74 KB)
MTP75N03HDL
Motorola
193.74 KB
Tmos power fet.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Advanced Information
HDTMOS E-FET ™ High Density Power FET N
*Ch.
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