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MTP75N03HDL TMOS POWER FET

MTP75N03HDL Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP75N03HDL/D Advanced Information HDTMOS E-FET ™ High Density Power FET N *Ch.

MTP75N03HDL Features

* VGS 16 12 8 4 0 70 20 28 24 10000 TJ = 25°C ID = 75 A VDD = 15 V VGS = 5 V VDS , DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) t, TIME (ns) 1000 tr 100 tf td(off) td(on) 10 1 10 RG, GATE RESISTANCE (OHMS) 100 www. DataSheet4U. com Figure 8. Gate
* To
* Source and Drain
* To

MTP75N03HDL Applications

* in power supplies, converters and PWM motor controls, and inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs www. DataSheet4U. com where inductive loads are switched, and to offer additional safety margin against unexpected voltage transients.

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Datasheet Details

Part number
MTP75N03HDL
Manufacturer
Motorola
File Size
193.74 KB
Datasheet
MTP75N03HDL_Motorola.pdf
Description
TMOS POWER FET

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TMOS POWER FET Motorola
Motorola MTP75N03HDL-like datasheet