MTP75N03HDL TMOS POWER FET

Motorola

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP75N03HDL/D Advanced Information HDTMOS E-FET ™ High Density Power FET N *Ch.

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Datasheet Specifications

Part number: MTP75N03HDL
Manufacturer: Motorola
File Size: 193.74 KB
Datasheet: MTP75N03HDL_Motorola.pdf
Description: TMOS POWER FET

Features

* VGS 16 12 8 4 0 70 20 28 24 10000 TJ = 25°C ID = 75 A VDD = 15 V VGS = 5 V VDS , DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) t, TIME (ns) 1000 tr 100 tf td(off) td(on) 10 1 10 RG, GATE RESISTANCE (OHMS) 100 www. DataSheet4U. com Figure 8. Gate
* To
* Source and Drain
* To

Applications

* in power supplies, converters and PWM motor controls, and inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs www. DataSheet4U. com where inductive loads are switched, and to offer additional safety margin against unexpected voltage transients.

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MTP75N03HDL TMOS POWER FET Motorola

Motorola MTP75N03HDL-like datasheet