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MTP75N05HD TMOS POWER FET

MTP75N05HD Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP75N05HD/D Designer's ™ HDTMOS E-FET Power Field Effect Transistor N *Channe.

MTP75N05HD Features

* n the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 8000 VDS = 0 7000 C, CAPACITANCE (pF) 6000 5000 4000 3000 2000 Coss 1000 0 10 5 VGS 0 VDS 5 1

MTP75N05HD Applications

* in power supplies, converters and PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs www. DataSheet4U. com where inductive loads are switched, and to offer additional safety margin against unexpected voltage transients.

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Datasheet Details

Part number
MTP75N05HD
Manufacturer
Motorola
File Size
178.54 KB
Datasheet
MTP75N05HD_Motorola.pdf
Description
TMOS POWER FET

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TMOS POWER FET Motorola
Motorola MTP75N05HD-like datasheet