MTP75N05HD Datasheet - Motorola

MTP75N05HD TMOS POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP75N05HD/D Designer's ™ HDTMOS E-FET Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate This advanced high cell density HDTMOS E FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain to source diode with a fast recovery time. Designed for low voltage, high speed.

MTP75N05HD Features

* n the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 8000 VDS = 0 7000 C, CAPACITANCE (pF) 6000 5000 4000 3000 2000 Coss 1000 0 10 5 VGS 0 VDS 5 1

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