Datasheet Specifications
- Part number
- MTP75N05HD
- Manufacturer
- Motorola
- File Size
- 178.54 KB
- Datasheet
- MTP75N05HD_Motorola.pdf
- Description
- TMOS POWER FET
Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP75N05HD/D Designer's ™ HDTMOS E-FET Power Field Effect Transistor N *Channe.
Features
* n the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 8000 VDS = 0 7000 C, CAPACITANCE (pF) 6000 5000 4000 3000 2000 Coss 1000 0 10 5 VGS 0 VDS 5 1Applications
* in power supplies, converters and PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs www. DataSheet4U. com where inductive loads are switched, and to offer additional safety margin against unexpected voltage transients.MTP75N05HD Distributors
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