MTP7N20E - TMOS POWER FET
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP7N20E/D Designer's TMOS E-FET .™ Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate This advanced TMOS E FET is designed to withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drain to source diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power supplies, converters an
MTP7N20E Features
* TANCE (pF) 600 Crss 450 300 150 VDS = 0 V 0 10 5 Ciss VGS = 0 V TJ = 25°C Ciss Coss Crss 5 0 10 15 20 25 VGS VDS GATE
* TO
* SOURCE OR DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 4 Motorola TMOS Power MOSFET Transistor Device Data MTP7N20E VGS
