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MTP7N20E Datasheet - Motorola

MTP7N20E TMOS POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP7N20E/D Designer's TMOS E-FET .™ Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate This advanced TMOS E FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain to source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters an.

MTP7N20E Features

* TANCE (pF) 600 Crss 450 300 150 VDS = 0 V 0 10 5 Ciss VGS = 0 V TJ = 25°C Ciss Coss Crss 5 0 10 15 20 25 VGS VDS GATE

* TO

* SOURCE OR DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 4 Motorola TMOS Power MOSFET Transistor Device Data MTP7N20E VGS

MTP7N20E_Motorola.pdf

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Datasheet Details

Part number:

MTP7N20E

Manufacturer:

Motorola

File Size:

186.10 KB

Description:

Tmos power fet.

MTP7N20E Distributor

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MTP7N20E MTP7N20E TMOS POWER FET Motorola