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Motorola Electronic Components Datasheet

P2N2907A Datasheet

Amplifier Transistor

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by P2N2907A/D
Amplifier Transistor
PNP Silicon
COLLECTOR
1
2
BASE
P2N2907A
3
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
–60
–60
–5.0
–600
625
5.0
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5 Watts
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200
Thermal Resistance, Junction to Case
RqJC
83.3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C/W
°C/W
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = –10 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = –10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = –10 mAdc, IC = 0)
Collector Cutoff Current
(VCE = –30 Vdc, VEB(off) = –0.5 Vdc)
Collector Cutoff Current
(VCB = –50 Vdc, IE = 0)
(VCB = –50 Vdc, IE = 0, TA = 150°C)
Emitter Cutoff Current
(VEB = –3.0 Vdc)
Collector Cutoff Current
(VCE = –10 V)
Base Cutoff Current
(VCE = –30 Vdc, VEB(off) = –0.5 Vdc)
v v1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
1
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
Symbol
Min
Max
Unit
V(BR)CEO –60
V(BR)CBO –60
V(BR)EBO –5.0
ICEX
ICBO
IEBO
ICEO
IBEX
–50
–0.01
–10
–10
–10
–50
Vdc
Vdc
Vdc
nAdc
µAdc
nAdc
nAdc
nAdc
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1


Motorola Electronic Components Datasheet

P2N2907A Datasheet

Amplifier Transistor

No Preview Available !

P2N2907A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –0.1 mAdc, VCE = –10 Vdc)
(IC = –1.0 mAdc, VCE = –10 Vdc)
(IC = –10 mAdc, VCE = –10 Vdc)
(IC = –150 mAdc, VCE = –10 Vdc)(1)
(IC = –500 mAdc, VCE = –10 Vdc)(1)
Collector – Emitter Saturation Voltage(1)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
Base – Emitter Saturation Voltage(1)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product(1), (2)
(IC = –50 mAdc, VCE = –20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = –2.0 Vdc, IC = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
hFE
VCE(sat)
VBE(sat)
75
100
100
100
50
fT
Cobo
Cibo
200
300
Vdc
–0.4
–1.6
Vdc
–1.3
–2.6
— MHz
8.0 pF
30 pF
Turn–On Time
Delay Time
Rise Time
(VCC = –30 Vdc, IC = –150 mAdc,
IB1 = –15 mAdc) (Figures 1 and 5)
Turn–Off Time
Storage Time
Fall Time
(VCC = –6.0 Vdc, IC = –150 mAdc,
IB1 = IB2 = –15 mAdc) (Figure 2)
v v1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
2. fT is defined as the frequency at which |hfe| extrapolates to unity.
ton — 50 ns
td — 10 ns
tr — 40 ns
toff — 110 ns
ts — 80 ns
tf — 30 ns
INPUT
Zo = 50
PRF = 150 PPS
RISE TIME 2.0 ns
P.W. < 200 ns
0
–16 V
1.0 k
50
–30 V
200
TO OSCILLOSCOPE
RISE TIME 5.0 ns
INPUT
Zo = 50
PRF = 150 PPS
RISE TIME 2.0 ns
P.W. < 200 ns
+15 V –6.0 V
1.0 k 37
0
–30 V
1.0 k
50
1N916
TO OSCILLOSCOPE
RISE TIME 5.0 ns
200 ns
Figure 1. Delay and Rise Time Test Circuit
200 ns
Figure 2. Storage and Fall Time Test Circuit
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Part Number P2N2907A
Description Amplifier Transistor
Maker Motorola Inc
Total Page 6 Pages
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