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MRFE6S9201HR3 Datasheet Rf Power Field Effect Transistors

Manufacturer: Motorola Semiconductor Products

Overview: www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRFE6S9201H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. • Typical Single - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 40 Watts Avg., f = 880 MHz, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz, PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 20.8 dB Drain Efficiency — 31.3% Device Output Signal PAR — 8.1 dB @ 0.01% Probability on CCDF ACPR @ 750 kHz Offset — - 46.

Key Features

  • 100% PAR Tested for Guaranteed Output Power Capability.
  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Greater Negative Gate - Source Voltage Range for Improved Class C Operation.
  • Qualified Up to a Maximum of 32 VDD Operation.
  • Integrated ESD Protection.
  • RoHS Compliant.
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRFE6S9201HR3 MRFE6S9201HSR3.

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