MRFE6S9201HR3 Datasheet | Motorola Semiconductor

.. Freescale Semiconductor Technical Data Document Number: MRFE6S9201H Rev. 1, 12/2008 RF Power Field Effect Transistors - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband mercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, mon - source amplifier applications in 28 volt base station equipment. - Typical Single - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 1400 m A, Pout = 40 Watts Avg., f = 880 MHz, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz, PAR = 9.8 d B @ 0.01% Probability on CCDF. Power Gain - 20.8 d B Drain Efficiency - 31.3% Device Output Signal PAR - 8.1 d B @ 0.01% Probability on CCDF ACPR @ 750 k Hz Offset - - 46.5 d Bc in 30 k Hz Channel Bandwidth - Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, Pout = 270 W CW (2 d B Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness Features - 100% PAR Tested for Guaranteed Output Power Capability - Characterized with Series Equivalent Large - Signal Impedance Parameters - Internally Matched for Ease of Use - Greater Negative Gate - Source Voltage Range for Improved Class C Operation - Qualified Up to a Maximum of 32 VDD Operation - Integrated ESD Protection - Ro HS pliant - In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRFE6S9201HR3 MRFE6S9201HSR3 880 MHz, 40 W AVG., 28 V SINGLE...