MRFE6S9201HR3 Datasheet PDF (RF Power Field Effect Transistors) | Download Motorola Semiconductor Products MRFE6S9201HR3

MRFE6S9201HR3 - RF Power Field Effect Transistors

Description

Short RF Beads 33 pF Chip Capacitors 10 μF, 50 V Tantalum Capacitors 0.6 - 4.5 pF Variable Capacitors, Gigatrim 3.3 pF Chip Capacitors 4.7 pF Chip Capacitors 15 pF Chip Capacitors 1.0 pF Chip Capacitors 470 μF, 63 V Electrolytic Capacitors 1.2K pF Chip Capacitors 20K pF Chip Capacitors 10 μF, 50 V C

Features

100% PAR Tested for Guaranteed Output Power Capability.
Characterized with Series Equivalent Large - Signal Impedance Parameters.
Internally Matched for Ease of Use.
Greater Negative Gate - Source Voltage Range for Improved Class C Operation.
Qualified Up to a Maximum of 32 VDD Operation.
Integrated ESD Protection.
RoHS Compliant.
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRFE6S9201HR3 MRFE6S9201HSR3.

Datasheet Details

Part number	MRFE6S9201HR3
Manufacturer	Motorola Semiconductor Products
File Size	526.88 KB
Description	RF Power Field Effect Transistors
Datasheet	MRFE6S9201HR3 Datasheet
Additional preview pages of the MRFE6S9201HR3 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRFE6S9201H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. • Typical Single - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 40 Watts Avg., f = 880 MHz, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz, PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 20.8 dB Drain Efficiency — 31.3% Device Output Signal PAR — 8.1 dB @ 0.

Published: Jul 29, 2009 |