MRFE6S9201HSR3 Datasheet | Motorola Semiconductor

Features - 100% PAR Tested for Guaranteed Output Power Capability - Characterized with Series Equivalent Large - Signal Impedance Parameters - Internally Matched for Ease of Use - Greater Negative Gate - Source Voltage Range for Improved Class C Operation - Qualified Up to a Maximum of 32 VDD Operation - Integrated ESD Protection - Ro HS pliant - In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRFE6S9201HR3 MRFE6S9201HSR3 880 MHz, 40 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRFE6S9201HR3 CASE 465A - 06, STYLE 1 NI - 780S MRFE6S9201HSR3 Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Symbol VDSS VGS Tstg TC TJ Value - 0.5, +66 - 6.0, +10 - 65 to +150 150 225 Unit Vdc Vdc °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 85°C, 197 W CW Case Temperature 75°C, 40 W CW Symbol RθJC Value (2,3) 0.34 0.33 Unit °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://.freescale./rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://.freescale./rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2007-2008. All rights reserved. MRFE6S9201HR3 MRFE6S9201HSR3 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics...