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MRFE6S9201HSR3 - RF Power Field Effect Transistors

Download the MRFE6S9201HSR3 datasheet PDF. This datasheet also covers the MRFE6S9201HR3 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

Short RF Beads 33 pF Chip Capacitors 10 μF, 50 V Tantalum Capacitors 0.6 - 4.5 pF Variable Capacitors, Gigatrim 3.3 pF Chip Capacitors 4.7 pF Chip Capacitors 15 pF Chip Capacitors 1.0 pF Chip Capacitors 470 μF, 63 V Electrolytic Capacitors 1.2K pF Chip Capacitors 20K pF Chip Capacitors 10 μF, 50 V C

Key Features

  • 100% PAR Tested for Guaranteed Output Power Capability.
  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Greater Negative Gate - Source Voltage Range for Improved Class C Operation.
  • Qualified Up to a Maximum of 32 VDD Operation.
  • Integrated ESD Protection.
  • RoHS Compliant.
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRFE6S9201HR3 MRFE6S9201HSR3.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRFE6S9201HR3_MotorolaSemiconductorProducts.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MRFE6S9201HSR3
Manufacturer Motorola Semiconductor Products
File Size 526.88 KB
Description RF Power Field Effect Transistors
Datasheet download datasheet MRFE6S9201HSR3 Datasheet

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Other Datasheets by Motorola Semiconductor Products

Part Number Description
MRFE6S9201HR3 RF Power Field Effect Transistors
MRFE6S9200HR3 RF Power FET
MRFE6S9200HSR3 RF Power FET
MRF8P20160HR3 RF Power Field Effect Transistors
MRF8P20160HSR3 RF Power Field Effect Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRFE6S9201H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. • Typical Single - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 40 Watts Avg., f = 880 MHz, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz, PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 20.8 dB Drain Efficiency — 31.3% Device Output Signal PAR — 8.1 dB @ 0.