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MRFE6S9201HSR3 Datasheet

RF Power Field Effect Transistors

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Freescale Semiconductor
Technical Data
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RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
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PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 20.8 dB
Drain Efficiency — 31.3%
Device Output Signal PAR — 8.1 dB @ 0.01% Probability on CCDF
ACPR @ 750 kHz Offset — - 46.5 dBc in 30 kHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, Pout = 270 W CW
(2 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
Features
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large - Signal Impedance Parameters
Internally Matched for Ease of Use
Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRFE6S9201H
Rev. 1, 12/2008
MRFE6S9201HR3
MRFE6S9201HSR3
880 MHz, 40 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRFE6S9201HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRFE6S9201HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
Table 2. Thermal Characteristics
VDSS
VGS
Tstg
TC
TJ
- 0.5, +66
- 6.0, +10
- 65 to +150
150
225
Vdc
Vdc
°C
°C
°C
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 85°C, 197 W CW
Case Temperature 75°C, 40 W CW
RθJC
0.34
0.33
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007-2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFE6S9201HR3 MRFE6S9201HSR3
1


Motorola Electronic Components Datasheet

MRFE6S9201HSR3 Datasheet

RF Power Field Effect Transistors

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Table 3. ESD Protection Characteristics
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Test Methodology
Class
Human Body Model (per JESD22 - A114)
1B (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 66 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IDSS
10 μAdc
IDSS
1 μAdc
IGSS
10 μAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 400 μAdc)
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 1400 mAdc, Measured in Functional Test)
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 4.11 Adc)
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Input Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
VGS(th)
VGS(Q)
VDS(on)
1.5
2.25
0.1
2.2
2.9
0.21
3
3.75
0.35
Vdc
Vdc
Vdc
Crss — 2.3 —
Coss
90
Ciss — 480 —
pF
pF
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 40 W Avg. N - CDMA, f = 880 MHz,
Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset.
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
Gps 19.5 20.8 22.5 dB
Drain Efficiency
ηD 29 31.3 — %
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
PAR 7.7 8.1 — dB
Adjacent Channel Power Ratio
ACPR
- 46.5
- 45
dBc
Input Return Loss
IRL — - 16 - 9 dB
1. Part is internally matched on input.
(continued)
MRFE6S9201HR3 MRFE6S9201HSR3
2
RF Device Data
Freescale Semiconductor


Part Number MRFE6S9201HSR3
Description RF Power Field Effect Transistors
Maker Motorola Semiconductor Products
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