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2N3772 - High power NPN silicon power transistors

Key Features

  • Forward biased second breakdown current capability IS/b = 2.5 A dc at VCE = 60V dc.
  • Pb-free packages. (TO-3) Style 1: Pin 1. Base 2. Emitter Collector (Case) Dimensions Minimum Maximum A 1.550 (39.37) Reference B - 1.050 (26.67) C 0.250 (6.35) 0.335 (8.51) D 0.038 (0.97) 0.043 (1.09) E 0.055 (1.40) 0.070 (1.77) G 0.430 (10.92) BSC H 0.215 (5.46) BSC K 0.440 (11.18) 0.480 (12.19) L 0.665 (16.89) BSC N - 0.830 (21.08) Q 0.151 (3.84) 0.165 (4.19) U 1.187 (30.15).

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Datasheet Details

Part number 2N3772
Manufacturer Multicomp
File Size 293.89 KB
Description High power NPN silicon power transistors
Datasheet download datasheet 2N3772 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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1165892 High power NPN silicon power transistors. These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications. Features: • Forward biased second breakdown current capability IS/b = 2.5 A dc at VCE = 60V dc. • Pb-free packages. (TO-3) Style 1: Pin 1. Base 2. Emitter Collector (Case) Dimensions Minimum Maximum A 1.550 (39.37) Reference B - 1.050 (26.67) C 0.250 (6.35) 0.335 (8.51) D 0.038 (0.97) 0.043 (1.09) E 0.055 (1.40) 0.070 (1.77) G 0.430 (10.92) BSC H 0.215 (5.46) BSC K 0.440 (11.18) 0.480 (12.19) L 0.665 (16.89) BSC N - 0.830 (21.08) Q 0.151 (3.84) 0.165 (4.19) U 1.187 (30.15) BSC V 0.131 (3.33) 0.188 (4.