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2N5886 - Complementary Power Transistors

Download the 2N5886 datasheet PDF. This datasheet also covers the 2N5884 variant, as both devices belong to the same complementary power transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0V (Maximum) at IC = 15A.
  • Excellent DC current Gain hFE = 20 ~ 100 at IC = 10A. Pin 1. Base 2. Emitter Collector(Case) Maximum Ratings Dimensions Minimum Maximum A 38.75 39.96 B 19.28 22.23 C 7.96 9.28 D 11.18 12.19 E 25.20 26.67 F 0.92 1.09 G 1.38 1.62 H 29.90 30.40 I 16.64 17.30 J 3.88 4.36 K 10.67 11.18 Dimensions : Millimetres PNP 2N5884 NPN 2N5886 25 Ampere Complementary Silicon Power T.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N5884-Multicomp.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2N5886
Manufacturer Multicomp
File Size 285.50 KB
Description Complementary Power Transistors
Datasheet download datasheet 2N5886 Datasheet

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Other Datasheets by Multicomp

Part Number Description
2N5880 Complementary Power Transistor
2N5882 Complementary Power Transistor
2N5884 Complementary Power Transistors
2N5038 NPN Transistor
2N5193 Bipolar Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2N5884 & 2N5886 Complementary Power Transistors General-purpose power amplifier and switching applications. Features: • Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0V (Maximum) at IC = 15A. • Excellent DC current Gain hFE = 20 ~ 100 at IC = 10A. Pin 1. Base 2. Emitter Collector(Case) Maximum Ratings Dimensions Minimum Maximum A 38.75 39.96 B 19.28 22.23 C 7.96 9.28 D 11.18 12.19 E 25.20 26.67 F 0.92 1.09 G 1.38 1.62 H 29.90 30.40 I 16.64 17.30 J 3.88 4.36 K 10.67 11.