2N5886 Key Features
- Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0V (Maximum) at IC = 15A
- Excellent DC current Gain hFE = 20 ~ 100 at IC = 10A
| Manufacturer | Part Number | Description |
|---|---|---|
STMicroelectronics |
2N5886 | COMPLEMENTARY SILICON HIGH POWER TRANSISTORS |
| 2N5886 | POWER TRANSISTORS | |
| 2N5886 | NPN SILICON POWER TRANSISTORS | |
| 2N5886 | Complementary Silicon High-Power Transistors | |
| 2N5886 | COMPLEMENTARY SILICON POWER TRANSISTORS |