NCE30H21 Datasheet PDF (N-Channel Enhancement Mode Power MOSFET)

NCE30H21 - N-Channel Enhancement Mode Power MOSFET

Description

The NCE30H21 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS =30V,ID =210A RDS(ON) < 2.5mΩ @ VGS=10V (Typ:1mΩ).
High density cell design for ultra low Rdson.
Fully characterized Avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability Schematic diagram.

Datasheet Details

Part number	NCE30H21
Manufacturer	NCEPOWER
File Size	324.15 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE30H21 Datasheet
Additional preview pages of the NCE30H21 datasheet.

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Full PDF Text Transcription

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Pb Free Product http://www.ncepower.com NCE30H21 NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE30H21 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES ● VDS =30V,ID =210A RDS(ON) < 2.

Published: Sep 5, 2014 |