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NCE75H21B - NCE N-Channel Enhancement Mode Power MOSFET

General Description

The NCE75H21B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS = 75V,ID =210A RDS(ON) < 4.5mΩ @ VGS=10V (Typ:3.8mΩ) Schematic diagram.
  • Special process technology for high ESD capability.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.

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Datasheet Details

Part number NCE75H21B
Manufacturer NCE Power
File Size 375.49 KB
Description NCE N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE75H21B Datasheet

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Full PDF Text Transcription (Reference)

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http://www.ncepower.com Pb Free Product NCE75H21B NCE N-Channel Enhancement Mode Power MOSFET Description The NCE75H21B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 75V,ID =210A RDS(ON) < 4.5mΩ @ VGS=10V (Typ:3.