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NCE75H21B Datasheet Preview

NCE75H21B Datasheet

NCE N-Channel Enhancement Mode Power MOSFET

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NCE75H21B pdf
http://www.ncepower.com
Pb Free Product
NCE75H21B
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE75H21B uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
VDS = 75V,ID =210A
RDS(ON) < 4.5m@ VGS=10V
(Typ:3.8m)
Schematic diagram
Special process technology for high ESD capability
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
100% ΔVds TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE75H21B
NCE75H21B
TO-220-3L
Reel Size
-
Tape width
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Limit
75
±20
210
148
850
310
Quantity
-
Unit
V
V
A
A
A
W
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0



NCE Power
NCE Power

NCE75H21B Datasheet Preview

NCE75H21B Datasheet

NCE N-Channel Enhancement Mode Power MOSFET

No Preview Available !

NCE75H21B pdf
http://www.ncepower.com
Pb Free Product
NCE75H21B
Derating factor
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
EAS
TJ,TSTG
2.07
2200
-55 To 175
W/
mJ
Thermal Characteristic
Thermal Resistance,Junction-to-Case (Note 2)
RθJc 0.48 /W
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
75 -
-
V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
IDSS
VDS=75V,VGS=0V
- - 1 μA
IGSS
VGS=±20V,VDS=0V
- - ±100 nA
Gate Threshold Voltage
Drain-Source On-State Resistance
VGS(th)
RDS(ON)
VDS=VGS,ID=250μA
VGS=10V, ID=40A
23
- 3.8
4
4.5
V
m
Forward Transconductance
Dynamic Characteristics (Note4)
gFS
VDS=5V,ID=40A
60 -
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
Coss
VDS=30V,VGS=0V,
F=1.0MHz
- 9400
- 880
-
-
PF
PF
Crss
- 520
-
PF
Turn-on Delay Time
td(on)
- 26.3
-
nS
Turn-on Rise Time
Turn-Off Delay Time
tr
td(off)
VDD=30V, RL=1
VGS=10V,RGEN=2.5
- 48.8
- 87.5
-
-
nS
nS
Turn-Off Fall Time
tf
- 30
-
nS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS=30V,ID=30A,
VGS=10V
- 228
- 66
-
-
nC
nC
Qgd
- 36
-
nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
VSD
VGS=0V,IS=20A
- - 1.2
V
IS
-
- - 110
A
Reverse Recovery Time
Reverse Recovery Charge
trr
TJ = 25°C, IF = 40A
- 53
-
nS
Qrr
di/dt = 100A/μs(Note3)
- 123
-
nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS conditionTj=25,VDD=37.5V,VG=10V,L=0.5mH,Rg=25
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
v1.0


Part Number NCE75H21B
Description NCE N-Channel Enhancement Mode Power MOSFET
Maker NCE Power
Total Page 7 Pages
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