nce n-channel enhancement mode power mosfet.
* VDS = 75V,ID =210A RDS(ON) < 4.5mΩ @ VGS=10V
(Typ:3.8mΩ)
Schematic diagram
* Special process technology for high ESD capability
* High density cell desig.
General Features
* VDS = 75V,ID =210A RDS(ON) < 4.5mΩ @ VGS=10V
(Typ:3.8mΩ)
Schematic diagram
* Special pro.
The NCE75H21B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS = 75V,ID =210A RDS(ON) < 4.5mΩ @ VGS=10V
(Typ:3.8mΩ)
Schematic.
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