* TrenchFET® power MOSFET
* Maximum 175 °C junction temperature
* Very low Qgd reduces power loss from passing through Vplateau
* 100 % Rg and UIS tested APPLICATIONS
* Power supply - Secondary synchronous rectification
* DC/DC converter
* Powe
NCE75H21TB Datasheet (252.14 KB)
NCE75H21TB
VBsemi
252.14 KB
N-channel mosfet.
NCE75H21TB-VB NCE75H21TB-VB Datasheet N-Channel 80 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) MAX. 0.0028 at VGS = 10 V 80.
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