NCE75H21TB Datasheet - VBsemi

NCE75H21TB, N-Channel MOSFET

NCE75H21TB-VB NCE75H21TB-VB Datasheet N-Channel 80 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) MAX.0.0028 at VGS = 10 V 80.

Features

* TrenchFET® power MOSFET
* Maximum 175 °C junction temperature
* Very low Qgd reduces power loss from passing through Vplateau

Applications

* Power supply - Secondary synchronous rectification
* DC/DC converter
* Power tools
* Motor drive switch
* DC/AC inverter
* Battery management ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate

NCE75H21TB-VBsemi.pdf

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Datasheet Details

Part number:

NCE75H21TB

Manufacturer:

VBsemi

File Size:

252.14 KB

Description:

N-Channel MOSFET

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NCE75H21TB N-Channel MOSFET VBsemi

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