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NCE2025S - N-Channel MOSFET

NCE2025S Description

NCE2025S-VB NCE2025S-VB Datasheet N-Channel 20-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0049 at VGS = 4.5 V 20 0.0056.

NCE2025S Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* 100 % Rg and UIS Tested

NCE2025S Applications

* Low-Side MOSFET for Synchronous Buck - Game Machine - PC D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 20 V VGS ± 16 TC = 25 °C 20e Continuous Drain Current (TJ

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Datasheet Details

Part number
NCE2025S
Manufacturer
VBsemi
File Size
256.82 KB
Datasheet
NCE2025S-VBsemi.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET VBsemi
VBsemi NCE2025S-like datasheet