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NCE2008E Datasheet - NCE Power Semiconductor

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NCE2008E NCE N-Channel Enhancement Mode Power MOSFET

http://www.ncepower.com Pb Free Product NCE2008E NCE N-Channel Enhancement Mode Power MOSFET .
The NCE2008E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

NCE2008E-NCEPowerSemiconductor.pdf

Preview of NCE2008E PDF

Datasheet Details

Part number:

NCE2008E

Manufacturer:

NCE Power Semiconductor

File Size:

319.41 KB

Description:

NCE N-Channel Enhancement Mode Power MOSFET

Features

* VDS = 20V,ID =6A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 24mΩ @ VGS=4.5V ESD Rating: 2000V HBM
* High power and current handing capability
* Lead free product is acquired

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