NCE2008E Datasheet, Mosfet, NCE Power Semiconductor

NCE2008E Features

• Mosfet
• VDS = 20V,ID =6A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 24mΩ @ VGS=4.5V ESD Rating: 2000V HBM
• High power and current handing capability
• Lead free product is a

PDF File Details

Part number:

NCE2008E

Manufacturer:

NCE Power Semiconductor

File Size:

319.41kb

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📄 Datasheet

Description:

Nce n-channel enhancement mode power mosfet. The NCE2008E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as

NCE2008E Application

• Applications .It is ESD protested. General Features
• VDS = 20V,ID =6A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 24mΩ @ VGS=4.5V ESD Rating: 2000

TAGS

NCE2008E

NCE Power Semiconductor

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