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NCE2008E

NCE N-Channel Enhancement Mode Power MOSFET

NCE2008E Features

* VDS = 20V,ID =6A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 24mΩ @ VGS=4.5V ESD Rating: 2000V HBM

* High power and current handing capability

* Lead free product is acquired

* Surface mount package Schematic diagram Marking and pin assignment Application

* PWM application

* Load

NCE2008E Datasheet (319.41 KB)

Preview of NCE2008E PDF

Datasheet Details

Part number:

NCE2008E

Manufacturer:

NCE Power Semiconductor

File Size:

319.41 KB

Description:

Nce n-channel enhancement mode power mosfet.

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NCE2008E NCE N-Channel Enhancement Mode Power MOSFET NCE Power Semiconductor

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