NCE2008E - NCE N-Channel Enhancement Mode Power MOSFET

Product Overview

NCE Power Semiconductor

Part number	NCE2008E
Manufacturer	NCE Power Semiconductor
File Size	319.41 KB
Description	NCE N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE2008E Datasheet
Additional preview pages of the NCE2008E datasheet.

The NCE2008E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

VDS = 20V,ID =6A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 24mΩ @ VGS=4.5V ESD Rating: 2000V HBM.
High power and current handing capability.
Lead free product is acquired.
Surface mount package Schematic diagram Marking and pin assignment.

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Published: May 22, 2015 |