NCE2006NE Datasheet, Mosfet, NCE Power Semiconductor

NCE2006NE Features

• Mosfet
• VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 21mΩ @ VGS=4.5V ESD Rating: 2000V HBM
• High Power and current handing capability
• Lead free product is a

PDF File Details

Part number:

NCE2006NE

Manufacturer:

NCE Power Semiconductor

File Size:

349.30kb

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📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The NCE2006NE uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low a

NCE2006NE Application

• Applications .It is ESD protested. General Features
• VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 21mΩ @ VGS=4.5V ESD Rating: 2000

TAGS

NCE2006NE

NCE Power Semiconductor

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