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NCE2012 - NCE N-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

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Datasheet Details

Part number	NCE2012
Manufacturer	NCE Power Semiconductor
File Size	358.47 KB
Description	NCE N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE2012-NCEPowerSemiconductor.pdf

NCE2012 Product details

Description

The NCE2012 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS =20V,ID =12A RDS(ON) < 8mΩ @ VGS=10V RDS(ON) < 11mΩ @ VGS=10V.
High density cell design for ultra low Rdson.
Fully characterized Avalanche voltage and current Schematic diagram.

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Published: May 22, 2015 |