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NCE Power Semiconductor

NCE0103M Datasheet Preview

NCE0103M Datasheet

N-Channel Enhancement Mode Power MOSFET

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http://www.ncepower.com
Pb Free Product
NCE0103M
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE0103M uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
VDS = 100V,ID = 3A
RDS(ON) <160m@ VGS=10V (Typ:136m)
RDS(ON) <170m@ VGS=4.5V (Typ:140m)
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Excellent package for good heat dissipation
Schematic diagram
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
SOT-89 -3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
0103M
NCE0103M
SOT-89-3L
Reel Size
Ø180mm
Tape width
12mm
Quantity
1000units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
ID
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
100
±20
3
20
1.5
-55 To 150
Unit
V
V
A
A
W
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
83 /W
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
IDSS
VGS=0V ID=250μA
VDS=100V,VGS=0V
Min Typ Max Unit
100 -
-
V
- - 1 μA
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0




NCE Power Semiconductor

NCE0103M Datasheet Preview

NCE0103M Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

http://www.ncepower.com
Parameter
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Symbol
IGSS
VGS(th)
RDS(ON)
gFS
Clss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS
Pb Free Product
NCE0103M
Condition
VGS=±20V,VDS=0V
VDS=VGS,ID=250μA
VGS=10V, ID=3A
VGS=4.5V, ID=3A
VDS=5V,ID=3A
VDS=50V,VGS=0V,
F=1.0MHz
Min Typ Max
- - ±100
Unit
nA
1.0 1.5
- 136
- 140
-5
2.0
160
170
-
V
m
S
- 650
- 24
- 20
-
-
-
PF
PF
PF
VDD=50V, RL=19
VGS=10V,RG=3
VDS=50V,ID=3A,
VGS=10V
-6
-4
- 20
-4
- 20
- 2.1
- 3.3
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
VGS=0V,IS=3A
- - 1.2
--
3
V
A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to productio
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
v1.0


Part Number NCE0103M
Description N-Channel Enhancement Mode Power MOSFET
Maker NCE Power Semiconductor
Total Page 7 Pages
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