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NCE01H10D - N-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

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Datasheet Details

Part number	NCE01H10D
Manufacturer	NCE Power Semiconductor
File Size	316.92 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE01H10D-NCEPowerSemiconductor.pdf

NCE01H10D Product details

Description

The NCE01H10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS = 100V,ID =100A RDS(ON) < 13mΩ @ VGS=10V (Typ:9.9mΩ).
Special process technology for high ESD capability.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation Schematic diagram.

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Published: Jun 2, 2018 |