NCE01H13 - N-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

General Description

The NCE01H13 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

VDS =100V,ID =130A RDS(ON).

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NCE01H13 n-channel enhancement mode power mosfet by NCE Power Semiconductor - Datasheet Preview

Datasheet Details

Part number	NCE01H13
Manufacturer	NCE Power Semiconductor
File Size	354.06 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE01H13 Datasheet

Full PDF Text Transcription for NCE01H13 (Reference)

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http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H13 uses advanced trench technology and design to provide excellent RDS(ON) with ...

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vanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Pb Free Product NCE01H13 General Features ● VDS =100V,ID =130A RDS(ON) <6.8mΩ @ VGS=10V (Typ:5.

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