NCE01P18L Description
The NCE01P18L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
NCE01P18L Key Features
- VDS =-100V,ID =-18A RDS(ON) <100mΩ @ VGS=-10V
- Super high dense cell design
- Advanced trench process technology
- Reliable and rugged
- High density cell design for ultra low On-Resistance
- Power management in notebook puter
- Portable equipment and battery powered systems
- Tape width
- Quantity