Datasheet4U Logo Datasheet4U.com

NCE01P30K - P-Channel Enhancement Mode Power MOSFET

General Description

The NCE01P30K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

It is ESD protested.

Key Features

  • VDS =-100V,ID =-30A RDS(ON).

📥 Download Datasheet

Datasheet Details

Part number NCE01P30K
Manufacturer NCE Power Semiconductor
File Size 398.45 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE01P30K Datasheet

Full PDF Text Transcription for NCE01P30K (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NCE01P30K. For precise diagrams, and layout, please refer to the original PDF.

http://www.ncepower.com Pb Free Product NCE01P30K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P30K uses advanced trench technology and design to prov...

View more extracted text
ption The NCE01P30K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features ● VDS =-100V,ID =-30A RDS(ON) <58mΩ @ VGS=-10V (Typ:44mΩ) RDS(ON) <65mΩ @ VGS=-4.

More Datasheets from NCE Power Semiconductor

Part Number Description
NCE01P30I P-Channel Enhancement Mode Power MOSFET
NCE01P30L P-Channel Enhancement Mode Power MOSFET
NCE01P03S P-Channel Enhancement Mode Power MOSFET
NCE01P13 P-Channel Enhancement Mode Power MOSFET
NCE01P13K P-Channel Enhancement Mode Power MOSFET
NCE01P18 P-Channel Enhancement Mode Power MOSFET
NCE01P18D P-Channel Enhancement Mode Power MOSFET
NCE01P18K P-Channel Enhancement Mode Power MOSFET
NCE01P18L P-Channel Enhancement Mode Power MOSFET
NCE0102 N-Channel Enhancement Mode Power MOSFET