NCE0224F mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS =200V,ID =24A RDS(ON) < 80mΩ @ VGS=10V
(Typ:64mΩ)
Schematic diagram
* High density cell design for ultra low Rdson
* Fully characterized avalanche vo.
General Features
* VDS =200V,ID =24A RDS(ON) < 80mΩ @ VGS=10V
(Typ:64mΩ)
Schematic diagram
* High density c.
The NCE0224F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS =200V,ID =24A RDS(ON) < 80mΩ @ VGS=10V
(Typ:64mΩ)
Schematic dia.
Image gallery
Download