NCE0202ZA - N-Channel Enhancement Mode Power MOSFET

Description

The NCE0202ZA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS = 200V,ID =2A RDS(ON) < 580mΩ @ VGS=10V (Typ:520mΩ).
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Excellent package for good heat dissipation D G S Schematic diagram.

NCE Power Semiconductor

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Datasheet Details

Part number	NCE0202ZA
Manufacturer	NCE Power Semiconductor
File Size	284.06 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE0202ZA Datasheet

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE0202ZA NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0202ZA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

Published: Jun 2, 2018 |