n-channel enhancement mode power mosfet.
* VDS = 200V,ID =2A RDS(ON) < 580mΩ @ VGS=10V (Typ:520mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current <.
General Features
* VDS = 200V,ID =2A RDS(ON) < 580mΩ @ VGS=10V (Typ:520mΩ)
* High density cell design for ultra.
The NCE0202ZA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS = 200V,ID =2A RDS(ON) < 580mΩ @ VGS=10V (Typ:520mΩ)
* High de.
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