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NCE2011E - NCE N-Channel Enhancement Mode Power MOSFET

Description

The NCE2011E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.It is ESD protested.

Features

  • VDS = 20V,ID =11A RDS(ON) < 7Ω @ VGS=2.5V RDS(ON) < 9Ω @ VGS=4.5V ESD Rating: 2000V HBM.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package Schematic diagram Marking and pin assignment.

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Datasheet preview – NCE2011E

Datasheet Details

Part number NCE2011E
Manufacturer NCE Power Semiconductor
File Size 332.18 KB
Description NCE N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE2011E Datasheet
Additional preview pages of the NCE2011E datasheet.

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE2011E NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2011E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.It is ESD protested. General Features ● VDS = 20V,ID =11A RDS(ON) < 7Ω @ VGS=2.5V RDS(ON) < 9Ω @ VGS=4.
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