NCE2012 - NCE N-Channel Enhancement Mode Power MOSFET

Description

The NCE2012 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS =20V,ID =12A RDS(ON) < 8mΩ @ VGS=10V RDS(ON) < 11mΩ @ VGS=10V.
High density cell design for ultra low Rdson.
Fully characterized Avalanche voltage and current Schematic diagram.

NCE Power Semiconductor

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Datasheet Details

Part number	NCE2012
Manufacturer	NCE Power Semiconductor
File Size	358.47 KB
Description	NCE N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE2012 Datasheet
Additional preview pages of the NCE2012 datasheet.

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE2012 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2012 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

Published: May 22, 2015 |