NCE20NP1006S mosfet equivalent, n and p-channel enhancement mode power mosfet.
* N-Channel
N-channel
P-channel
VDS = 20V,ID =10A RDS(ON) < 14mΩ @ VGS=4.5V RDS(ON) < 18mΩ @ VGS=2.5V
* P-Channel
VDS = -20V,ID = -6A
Only Schematic diagram
.
General Features
* N-Channel
N-channel
P-channel
VDS = 20V,ID =10A RDS(ON) < 14mΩ @ VGS=4.5V RDS(ON) < 18mΩ @ .
The NCE20NP1006S uses advanced trench technology to
provide excellent RDS(ON) and low gate charge . The
complementary MOSFETs may be used to form a level shifted
high side switch, and for a host of other applications.
General Features
* N-C.
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