Full PDF Text Transcription for NCE20PK0302U (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
NCE20PK0302U. For precise diagrams, and layout, please refer to the original PDF.
http://www.ncepower.com Pb Free Product NCE20PK0302U Integrated P-Channel Enhancement Mode Power MOSFET and Schottky Diode Description The NCE20PK0302U uses advanced tren...
View more extracted text
FET and Schottky Diode Description The NCE20PK0302U uses advanced trench technology to provide excellent RDS(ON), low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. General Features MOSFET ● VDS = -20V,ID = -3.9A RDS(ON) < 105mΩ @ VGS=-4.5V RDS(ON) < 140mΩ @ VGS=-2.5V RDS(ON) < 170mΩ @ VGS=-1.8V Schematic diagram Schottky Diode ● VKA(V) = 20V, IF = 2A, VF<0.45V@0.
NCE20PK0302U Datasheet
