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NCE Power Semiconductor

NCE20PK0402U Datasheet Preview

NCE20PK0402U Datasheet

P-Channel Enhancement Mode Power MOSFET

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http://www.ncepower.com
Pb Free Product
NCE20PK0402U
Integrated P-Channel Enhancement Mode Power MOSFET and Schottky Diode
Description
The NCE20PK0402U uses advanced trench technology to
provide excellent RDS(ON), low gate charge. A Schottky diode
is provided to facilitate the implementation of a bidirectional
blocking switch, or for DC-DC conversion applications.
General Features
MOSFET
VDS = -20V,ID = -4.3A
RDS(ON) < 80m@ VGS=-4.5V
RDS(ON) < 100m@ VGS=-2.5V
RDS(ON) < 160m@ VGS=-1.8V
Schottky Diode
VKA(V) = 20V, IF = 2A, VF<0.45V@0.5A
Application
Bidirectional blocking switch
DC-DC conversion applications
Schematic diagram
Marking and pin assignment
DFN2X3-8L Bottom View
Package Marking and Ordering Information
Device Marking
Device
Device Package
0402
NCE20PK0402U
DFN2X3-8L
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
MOSFET
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous (Note 2)
Drain Current -Pulsed (Note 1)
TA=25°C
TA=70°C
VDS
VGS
ID
-20
±12
-4.3
-3.3
-17
Schottky reverse voltage
Continuous Forward Current (Note 2)
Pulsed Forward Current(Note 1)
TA=25°C
TA=70°C
IF
Power Dissipation
TA=25°C
TA=70°C
Operating Junction and Storage Temperature Range
PD
TJ,TSTG
2.3
1.45
-55 To 150
Schottky
20
2
1.5
8
1.45
0.92
-55 To 150
Unit
V
V
A
A
V
A
A
W
Wuxi NCE Power Co., Ltd
Page 1
V1.0




NCE Power Semiconductor

NCE20PK0402U Datasheet Preview

NCE20PK0402U Datasheet

P-Channel Enhancement Mode Power MOSFET

No Preview Available !

http://www.ncepower.com
Pb Free Product
NCE20PK0402U
Thermal Characteristic
Parameter
Symbol
Typ
Thermal Resistance,Junction-to-Ambient (Note 2) (MOSFET)
RθJA
78
Thermal Resistance,Junction-to-Ambient (Note 2) (Schottky)
RθJA
87
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Max
89
107
Unit
/W
/W
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
BVDSS
IDSS
IGSS
VGS=0V ID=-250μA
VDS=-20V,VGS=0V
VGS=±12V,VDS=0V
-20 - V
- - -1 μA
- - ±100 nA
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=-250μA
VGS=-4.5V, ID=-4 A
VGS=-2.5V, ID=-3A
VGS=-1.8V, ID=-2A
VDS=-5V,ID=-4A
-0.4 -0.7 -1
V
- 63 80 m
- 83 100 m
120 160 m
7-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
Coss
VDS=-10V,VGS=0V,
F=1.0MHz
- 500 -
- 70 -
PF
PF
Crss - 55 - PF
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=-10V, RL=5
VGS=-4.5V,RGEN=3
VDS=-10V,ID=-4A,
VGS=-4.5V
- 7 - nS
- 15 - nS
- 29 - nS
- 20 - nS
- 5 - nC
- 1.1 - nC
- 1 - nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
VSD
IF=-4A
- - -1.2 V
IS - - -1.3 A
Schottky Parameter
Forward Voltage Drop
VF
VGS=0V,IS=0.5A
- 0.43 0.45 V
Reverse Breakdown Voltage
VBR
IR=100μA
20
V
Maximum reverse leakage current TJ=25°C
TJ=125°C
- 20 100 μA
Irm
VR=20V
- 5.1 10 mA
Junction Capacitance
CT
VR=10V
- 35 - pF
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in
any given application depends on the user's specific board design.Surface Mounted on FR4 Board, t 10 sec. The current rating is based on the t 10s thermal
resistance rating.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production .
Wuxi NCE Power Co., Ltd
Page 2
V1.0


Part Number NCE20PK0402U
Description P-Channel Enhancement Mode Power MOSFET
Maker NCE Power Semiconductor
Total Page 7 Pages
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