• Part: NCE3025G
  • Manufacturer: NCE Power Semiconductor
  • Size: 300.22 KB
Download NCE3025G Datasheet PDF
NCE3025G page 2
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NCE3025G Key Features

  • High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current
  • Good stability and uniformity with high EAS
  • Excellent package for good heat dissipation
  • Special process technology for high ESD capability
  • SMPS and general purpose

NCE3025G Description

The NCE3025G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.