* VDS =30V,ID =25A RDS(ON) < 10mΩ @ VGS=10V RDS(ON) < 14mΩ @ VGS=4.5V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage a.

General Features
* VDS =30V,ID =25A RDS(ON) < 10mΩ @ VGS=10V RDS(ON) < 14mΩ @ VGS=4.5V
* High density cell des.

The NCE3025G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features
* VDS =30V,ID =25A RDS(ON) < 10mΩ @ VGS=10V RDS(ON) < 14mΩ @ VGS=4.5V <.

NCE3025Q

NCE3020Q

NCE3007S

NCE3008M

NCE3010S

NCE3011E

NCE3012S

NCE3018AS

NCE3030K

NCE3035G

NCE3035K

NCE3035Q

NCE3050