NCE3008M - N-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

General Description

The NCE3008M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other switching application.

VDS =30V,ID =8A RDS(ON)

📥 Download Datasheet

NCE3008M n-channel enhancement mode power mosfet by NCE Power Semiconductor - Datasheet Preview

Datasheet Details

Part number	NCE3008M
Manufacturer	NCE Power Semiconductor
File Size	269.20 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE3008M Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
NCE3010S	N-Channel Enhancement Mode Power MOSFET	NCEPOWER
NCE3050K	N-Channel Enhancement Mode Power MOSFET	NCEPOWER
NCE3080K	N-Channel Enhancement Mode Power MOSFET	NCEPOWER
NCE30H21	N-Channel Enhancement Mode Power MOSFET	NCEPOWER
NCE30P50G	P-Channel Enhancement Mode Power MOSFET	NCEPOWER

Other Datasheets by NCE Power Semiconductor

Part Number	Description
NCE3007S	P-Channel Enhancement Mode Power MOSFET
NCE3011E	N-Channel Enhancement Mode Power MOSFET
NCE3012S	P-Channel Enhancement Mode Power MOSFET
NCE3018AS	N-Channel Enhancement Mode Power MOSFET
NCE3020Q	N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

http://www.ncepower.com Pb Free Product NCE3008M NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3008M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. General Feature ● VDS =30V,ID =8A RDS(ON) <22.5mΩ @ VGS=10V RDS(ON) < 32mΩ @ VGS=4.