NCE3008M Overview
The NCE3008M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application.
NCE3008M datasheet by NCE Power Semiconductor.
| Part number | NCE3008M |
|---|---|
| Datasheet | NCE3008M-NCEPowerSemiconductor.pdf |
| File Size | 269.20 KB |
| Manufacturer | NCE Power Semiconductor |
| Description | N-Channel Enhancement Mode Power MOSFET |
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The NCE3008M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application.
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