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NCE3018AS - N-Channel Enhancement Mode Power MOSFET

General Description

The NCE3018AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =30V,ID =18A RDS(ON) < 7mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=4.5V.
  • High density cell design for ultra low Rdson.
  • Fully characterized Avalanche voltage and current Schematic diagram.

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Datasheet Details

Part number NCE3018AS
Manufacturer NCE Power Semiconductor
File Size 376.15 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE3018AS Datasheet

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Full PDF Text Transcription (Reference)

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http://www.ncepower.com Pb Free Product NCE3018AS NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3018AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =18A RDS(ON) < 7mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=4.