NCE3018AS Datasheet | NCE Power Semiconductor

http://.ncepower. Pb Free Product NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3018AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS =30V,ID =18A RDS(ON) < 7mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=4.5V - High density cell design for ultra low Rdson - Fully characterized Avalanche voltage and current Schematic diagram Application - Power switching application - Hard switched and high frequency circuits - Uninterruptible power supply Marking and pin Assignment SOP-8 top view Package Marking and Ordering Information Device Marking...