Datasheet Details
| Part number | NCE3007S |
|---|---|
| Manufacturer | NCE Power Semiconductor |
| File Size | 381.43 KB |
| Description | P-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 NCE3007S Datasheet
|
|
|
General Description
The NCE3007S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in load switch and battery protection applications.
Key Features
- VDS =-30V,ID =-6.5A RDS(ON) < 46mΩ @ VGS=-10V RDS(ON) < 72mΩ @ VGS=-4.5V Schematic diagram.
- High density cell design for ultra low Rdson.
- Fully characterized avalanche voltage and current.