NCE3007S Datasheet | NCE Power Semiconductor

http://.ncepower. Pb Free Product NCE P-Channel Enhancement Mode Power MOSFET Description The NCE3007S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in load switch and battery protection applications. General Features - VDS =-30V,ID =-6.5A RDS(ON) < 46mΩ @ VGS=-10V RDS(ON) < 72mΩ @ VGS=-4.5V Schematic diagram - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current Application - Load switch - battery protection Marking and pin assignment 100% UIS Tested 100% Rg Tested SOP-8 top view Package Marking and Ordering Information Device Marking Device Device...