Datasheet Details
| Part number | NCE3011E |
|---|---|
| Manufacturer | NCE Power Semiconductor |
| File Size | 356.67 KB |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 NCE3011E Datasheet
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General Description
The NCE3011E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
This device is suitable for use as a load switch or in PWM applications.It is ESD protested.
Key Features
- VDS = 30V,ID =11A RDS(ON) < 10mΩ @ VGS=10V RDS(ON) < 14mΩ @ VGS=4.5V ESD Rating: 2000V HBM.
- High power and current handing capability.
- Lead free product is acquired.
- Surface mount package.