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NCE3011E - N-Channel Enhancement Mode Power MOSFET

Product Overview

NCE Power Semiconductor

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NCE3011E N-Channel Enhancement Mode Power MOSFET by NCE Power Semiconductor - Datasheet Preview — Datasheet preview – NCE3011E

Datasheet Details

Part number	NCE3011E
Manufacturer	NCE Power Semiconductor
File Size	356.67 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE3011E Datasheet
Additional preview pages of the NCE3011E datasheet.

Product details

Description

The NCE3011E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

Features

VDS = 30V,ID =11A RDS(ON) < 10mΩ @ VGS=10V RDS(ON) < 14mΩ @ VGS=4.5V ESD Rating: 2000V HBM.
High power and current handing capability.
Lead free product is acquired.
Surface mount package.

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Published: Feb 5, 2016 |