Datasheet Details
| Part number | NCE3012S |
|---|---|
| Manufacturer | NCE Power Semiconductor |
| File Size | 369.90 KB |
| Description | P-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 NCE3012S Datasheet
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General Description
The NCE3012S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.
This device is suitable for use as a load switch or in PWM applications.
Key Features
- VDS = -30V,ID = -12A RDS(ON) < 20mΩ @ VGS=-4.5V RDS(ON) < 15mΩ @ VGS=-10V Schematic diagram.
- High Power and current handing capability.
- Lead free product is acquired.
- Surface Mount Package.