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NCE3012S - P-Channel Enhancement Mode Power MOSFET

Product Overview

NCE Power Semiconductor

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NCE3012S P-Channel Enhancement Mode Power MOSFET by NCE Power Semiconductor - Datasheet Preview — Datasheet preview – NCE3012S

Datasheet Details

Part number	NCE3012S
Manufacturer	NCE Power Semiconductor
File Size	369.90 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	NCE3012S Datasheet
Additional preview pages of the NCE3012S datasheet.

Product details

Description

The NCE3012S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

Features

VDS = -30V,ID = -12A RDS(ON) < 20mΩ @ VGS=-4.5V RDS(ON) < 15mΩ @ VGS=-10V Schematic diagram.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package.

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Published: May 22, 2015 |