NCE30H11G - N-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

General Description

The NCE30H11G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

VDS =30V,ID =110A RDS(ON).

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NCE30H11G n-channel enhancement mode power mosfet by NCE Power Semiconductor - Datasheet Preview

Datasheet Details

Part number	NCE30H11G
Manufacturer	NCE Power Semiconductor
File Size	373.36 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE30H11G Datasheet

Full PDF Text Transcription for NCE30H11G (Reference)

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http://www.ncepower.com Pb Free Product NCE30H11G NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H11G uses advanced trench technology and design to prov...

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ption The NCE30H11G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =110A RDS(ON) <2.4 mΩ @ VGS=10V RDS(ON) <3.0mΩ @ VGS=4.

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