NCE30H12K - N-Channel Enhancement Mode Power MOSFET

Description

The NCE30H12K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS =30V,ID =120A RDS(ON).

NCE Power Semiconductor

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Datasheet Details

Part number	NCE30H12K
Manufacturer	NCE Power Semiconductor
File Size	446.83 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE30H12K Datasheet
Additional preview pages of the NCE30H12K datasheet.

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http://www.ncepower.com Pb Free Product NCE30H12K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H12K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =120A RDS(ON) <4.5mΩ @ VGS=10V (Typ:3.

Published: May 22, 2015 |