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NCE Power Semiconductor

NCE30P12S Datasheet Preview

NCE30P12S Datasheet

P-Channel Enhancement Mode Power MOSFET

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http://www.ncepower.com
Pb Free Product
NCE30P12S
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE30P12S uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 4.5V. This device is suitable for use as a
load switch or in PWM applications.
General Features
VDS = -30V,ID = -12A
RDS(ON) < 25m@ VGS=-4.5V
RDS(ON) < 16m@ VGS=-10V
Schematic diagram
High Power and current handing capability
Lead free product is acquired
Surface mount package
Application
PWM applications
Load switch
Power management
Marking and pin assignment
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
30P12
NCE30P12S
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
ID
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-30
±20
-12
-48
3
-55 To 150
Unit
V
V
A
A
W
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
41.67
/W
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Min Typ Max Unit
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0




NCE Power Semiconductor

NCE30P12S Datasheet Preview

NCE30P12S Datasheet

P-Channel Enhancement Mode Power MOSFET

No Preview Available !

http://www.ncepower.com
Pb Free Product
NCE30P12S
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Symbol
BVDSS
IDSS
IGSS
Condition
VGS=0V ID=-250μA
VDS=-30V,VGS=0V
VGS=±20V,VDS=0V
Min Typ
-30 -33
--
--
Max
-
-1
±100
Unit
V
μA
nA
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=-250μA
VGS=-10V, ID=-10A
VGS=-4.5V, ID=-7A
VDS=-10V,ID=-10A
-1 -1.5
- 11.5
- 18
20 -
-3
15
25
-
V
m
m
S
Clss
Coss
VDS=-15V,VGS=0V,
F=1.0MHz
- 1750
- 215
-
-
PF
PF
Crss
- 180
-
PF
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=-15V, ID=-10A,
VGS=-10V,RGEN=1
VDS=-15V,ID=-10A,VGS=-10V
-
-
-
-
-
-
-
9
8
28
10
24
3.5
6
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
VSD
VGS=0V,IS=-2A
- - -1.2 V
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
v1.0


Part Number NCE30P12S
Description P-Channel Enhancement Mode Power MOSFET
Maker NCE Power Semiconductor
Total Page 7 Pages
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