Datasheet Details
| Part number | NCE30P12S |
|---|---|
| Manufacturer | NCE Power Semiconductor |
| File Size | 330.66 KB |
| Description | P-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 NCE30P12S Datasheet
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Description
The NCE30P12S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.
This device is suitable for use as a load switch or in PWM applications.
Features
- VDS = -30V,ID = -12A RDS(ON) < 25mΩ @ VGS=-4.5V RDS(ON) < 16mΩ @ VGS=-10V Schematic diagram.
- High Power and current handing capability.
- Lead free product is acquired.
- Surface mount package.