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NCE Power Semiconductor

NCE30P20Q Datasheet Preview

NCE30P20Q Datasheet

P-Channel Enhancement Mode Power MOSFET

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http://www.ncepower.com
Pb Free Product
NCE30P20Q
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE30P20Q uses advanced trench technology to provide
excellent RDS(ON), low gate charge . This device is suitable for
use as a load switch or in PWM applications.
General Features
VDS = -30V,ID = -20A
RDS(ON) < 25m@ VGS=-4.5V
RDS(ON) < 15m@ VGS=-10V
High Power and current handing capability
Lead free product is acquired
Surface mount package
Schematic diagram
Application
PWM applications
Load switch
Power management
Marking and pin assignment
Package Marking and Ordering Information
Device Marking
NCE30P20Q
Device
NCE30P20Q
Device Package
DFN3.3X3.3
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Continuous(TC=100)
Drain Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
ID (100)
IDM
PD
TJ,TSTG
Limit
-30
±20
-20
-14.1
-80
35
-55 To 150
Unit
V
V
A
A
A
W
Thermal Characteristic
Thermal Resistance,Junction-to-Case (Note 2)
RθJC
3.57 /W
Wuxi NCE Power Co., Ltd
Page 1
V1.0




NCE Power Semiconductor

NCE30P20Q Datasheet Preview

NCE30P20Q Datasheet

P-Channel Enhancement Mode Power MOSFET

No Preview Available !

http://www.ncepower.com
Pb Free Product
NCE30P20Q
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Symbol
BVDSS
IDSS
IGSS
Condition
VGS=0V ID=-250μA
VDS=-30V,VGS=0V
VGS=±20V,VDS=0V
Min Typ
-30 -33
--
--
Max
-
-1
±100
Unit
V
μA
nA
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=-250μA
VGS=-10V, ID=-15A
VGS=-4.5V, ID=-15A
VDS=-5V,ID=-15A
-1 -1.5
- 11.5
- 18
15 -
-1.9
15
25
-
V
m
m
S
Clss
Coss
VDS=-25V,VGS=0V,
F=1.0MHz
- 2130
- 302
-
-
PF
PF
Crss
- 227
-
PF
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
- 12
VDD=-15V, ID=-15A,
VGS=-10V,RGEN=1
- 10
- 25
- 13
- 45.6
VDS=-15V,ID=-20A,VGS=-10V -
4.6
- 11.1
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
VSD
VGS=0V,IS=-20A
- - -1.2 V
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
Wuxi NCE Power Co., Ltd
Page 2
V1.0


Part Number NCE30P20Q
Description P-Channel Enhancement Mode Power MOSFET
Maker NCE Power Semiconductor
Total Page 7 Pages
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