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NCE30P20Q - P-Channel Enhancement Mode Power MOSFET

Description

The NCE30P20Q uses advanced trench technology to provide excellent RDS(ON), low gate charge .

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS = -30V,ID = -20A RDS(ON) < 25mΩ @ VGS=-4.5V RDS(ON) < 15mΩ @ VGS=-10V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package Schematic diagram.

📥 Download Datasheet

Datasheet Details

Part number NCE30P20Q
Manufacturer NCE Power Semiconductor
File Size 306.24 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE30P20Q Datasheet

Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE30P20Q NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P20Q uses advanced trench technology to provide excellent RDS(ON), low gate charge . This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -30V,ID = -20A RDS(ON) < 25mΩ @ VGS=-4.5V RDS(ON) < 15mΩ @ VGS=-10V ● High Power and current handing capability ● Lead free product is acquired ● Surface mount package Schematic diagram Application ● PWM applications ● Load switch ● Power management Marking and pin assignment Package Marking and Ordering Information Device Marking NCE30P20Q Device NCE30P20Q Device Package DFN3.3X3.
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