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NCE30P30G - P-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

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Datasheet Details

Part number	NCE30P30G
Manufacturer	NCE Power Semiconductor
File Size	360.70 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	NCE30P30G-NCEPowerSemiconductor.pdf

NCE30P30G Product details

Description

The NCE30P30G uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications.

Features

VDS = -30V,ID = -30A RDS(ON) < 10mΩ @ VGS=-10V RDS(ON) < 15mΩ @ VGS=-4.5V.
High power and current handing capability.
Lead free product is acquired.
Surface mount package Schematic diagram DDDD DDDD.

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Published: Jun 2, 2018 |