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NCE30P30G - P-Channel Enhancement Mode Power MOSFET

General Description

The NCE30P30G uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS = -30V,ID = -30A RDS(ON) < 10mΩ @ VGS=-10V RDS(ON) < 15mΩ @ VGS=-4.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package Schematic diagram DDDD DDDD.

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Datasheet Details

Part number NCE30P30G
Manufacturer NCE Power Semiconductor
File Size 360.70 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE30P30G Datasheet

Full PDF Text Transcription for NCE30P30G (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NCE30P30G. For precise diagrams, and layout, please refer to the original PDF.

http://www.ncepower.com Pb Free Product NCE30P30G NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P30G uses advanced trench technology to provide excelle...

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ption The NCE30P30G uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -30V,ID = -30A RDS(ON) < 10mΩ @ VGS=-10V RDS(ON) < 15mΩ @ VGS=-4.

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