Full PDF Text Transcription for NCE3415 (Reference)
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http://www.ncepower.com Pb Free Product NCE3415 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE3415 uses advanced trench technology to provide excellent R...
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ion The NCE3415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features ● VDS = -20V,ID =-4A RDS(ON) < 60mΩ @ VGS=-2.5V RDS(ON) < 45mΩ @ VGS=-4.
NCE3415 Datasheet
