NCE4036F mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS =-40V,ID =-36A RDS(ON) <16mΩ @ VGS=-10V RDS(ON) <23mΩ @ VGS=-4.5V
* High density cell design for ultra low Rdson
* Fully characterized Avalanche voltage.
GENERAL FEATURES
* VDS =-40V,ID =-36A RDS(ON) <16mΩ @ VGS=-10V RDS(ON) <23mΩ @ VGS=-4.5V
* High density cell d.
The NCE4036F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
GENERAL FEATURES
* VDS =-40V,ID =-36A RDS(ON) <16mΩ @ VGS=-10V RDS(ON) <23mΩ @ VGS=-4.5V.
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