NCE40H12I - N-Channel Enhancement Mode Power MOSFET

Description

The NCE40H12I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS =40V,ID =120A RDS(ON).

NCE Power Semiconductor

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Datasheet Details

Part number	NCE40H12I
Manufacturer	NCE Power Semiconductor
File Size	356.81 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE40H12I Datasheet

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE40H12I NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H12I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =40V,ID =120A RDS(ON) <4mΩ @ VGS=10V RDS(ON) <7mΩ @ VGS=4.

Published: Feb 7, 2016 |