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NCE40ND0812S - N-Channel Enhancement Mode Power MOSFET

General Description

The NCE40ND0812S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =40V,ID =8A VDS =40V,ID =12A RDS(ON) < 18mΩ @ VGS=10V RDS(ON) < 14mΩ @ VGS=10V RDS(ON) < 28mΩ @ VGS=4.5V RDS(ON) < 20mΩ @ VGS=4.5V.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current Schematic diagram.

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Datasheet Details

Part number NCE40ND0812S
Manufacturer NCE Power Semiconductor
File Size 526.51 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE40ND0812S Datasheet

Full PDF Text Transcription for NCE40ND0812S (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NCE40ND0812S. For precise diagrams, and layout, please refer to the original PDF.

http://www.ncepower.com Pb Free Product NCE40ND0812S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40ND0812S uses advanced trench technology and design t...

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cription The NCE40ND0812S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =40V,ID =8A VDS =40V,ID =12A RDS(ON) < 18mΩ @ VGS=10V RDS(ON) < 14mΩ @ VGS=10V RDS(ON) < 28mΩ @ VGS=4.5V RDS(ON) < 20mΩ @ VGS=4.

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