* VDS =40V,ID =8A VDS =40V,ID =12A RDS(ON) < 18mΩ @ VGS=10V RDS(ON) < 14mΩ @ VGS=10V RDS(ON) < 28mΩ @ VGS=4.5V RDS(ON) < 20mΩ @ VGS=4.5V
* High density cell .

General Features
* VDS =40V,ID =8A VDS =40V,ID =12A RDS(ON) < 18mΩ @ VGS=10V RDS(ON) < 14mΩ @ VGS=10V RDS(ON) .

The NCE40ND0812S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features
* VDS =40V,ID =8A VDS =40V,ID =12A RDS(ON) < 18mΩ @ VGS=10V RDS(.

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NCE40H12K