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NCE55P04S - P-Channel Enhancement Mode Power MOSFET

General Description

The NCE55P04S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =-55V,ID =-4A RDS(ON).

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Datasheet Details

Part number NCE55P04S
Manufacturer NCE Power Semiconductor
File Size 357.80 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE55P04S Datasheet

Full PDF Text Transcription for NCE55P04S (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NCE55P04S. For precise diagrams, and layout, please refer to the original PDF.

http://www.ncepower.com Pb Free Product NCE55P04S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE55P04S uses advanced trench technology and design to prov...

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ption The NCE55P04S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

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