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NCE Power Semiconductor

NCE55P04S Datasheet Preview

NCE55P04S Datasheet

P-Channel Enhancement Mode Power MOSFET

No Preview Available !

http://www.ncepower.com
Pb Free Product
NCE55P04S
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE55P04S uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
VDS =-55V,ID =-4A
RDS(ON) <82m@ VGS=-10V
D1
G1
G2
D2
S1 S2
Schematic diagram
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Excellent package for good heat dissipation
Application
Power switching application
Hard switched and high frequency circuits
DC-DC Converter
Marking and pin assignment
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE55P04S
NCE55P04S
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
IDM
PD
TJ,TSTG
Limit
-55
±20
-4
-2.8
-25
3
-55 To 150
Unit
V
V
A
A
A
W
Thermal Characteristic
Thermal Resistance ,Junction-to-Ambient(Note 2)
RθJA
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
42 /W
Min Typ Max Unit
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0




NCE Power Semiconductor

NCE55P04S Datasheet Preview

NCE55P04S Datasheet

P-Channel Enhancement Mode Power MOSFET

No Preview Available !

http://www.ncepower.com
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
gFS
Clss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS
VGS=0V ID=-250μA
VDS=-55V,VGS=0V
VGS=±20V,VDS=0V
VDS=VGS,ID=-250μA
VGS=-10V, ID=-4A
VDS=-15V,ID=-4A
VDS=-25V,VGS=0V,
F=1.0MHz
VDD=-30V, ,RL=30
VGS=-10V,RGEN=6
VDS=-30V,ID=-4A,
VGS=-10V
VGS=0V,IS=-4A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
Pb Free Product
NCE55P04S
-55 -
--
--
-
-1
±100
V
μA
nA
-1.5 -2.6
- 66
16 -
-3.5
82
-
V
m
S
- 1450
- 145
- 110
-
-
-
PF
PF
PF
-8
-9
- 65
- 30
- 26
- 4.5
-7
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
- - -1.2
--
-4
V
A
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
v1.0


Part Number NCE55P04S
Description P-Channel Enhancement Mode Power MOSFET
Maker NCE Power Semiconductor
Total Page 7 Pages
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