* VDS =-55V,ID =-4A RDS(ON) <82mΩ @ VGS=-10V D1 G1 G2 D2 S1 S2 Schematic diagram
* High density cell design for ultra low Rdson
* Fully characterized ava.

General Features
* VDS =-55V,ID =-4A RDS(ON) <82mΩ @ VGS=-10V D1 G1 G2 D2 S1 S2 Schematic diagram
* High d.

The NCE55P04S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features
* VDS =-55V,ID =-4A RDS(ON) <82mΩ @ VGS=-10V D1 G1 G2 D2 S1 S2 Sche.

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