NCE60P50 Description
The NCE60P50 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.
NCE60P50 Key Features
- VDS =-60V,ID =-50A RDS(ON) <28mΩ @ VGS=-10V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Load switch
- Tape width
- Quantity