Datasheet4U Logo Datasheet4U.com

NCE60P50 - P-Channel Enhancement Mode Power MOSFET

General Description

The NCE60P50 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.

Key Features

  • VDS =-60V,ID =-50A RDS(ON).

📥 Download Datasheet

Datasheet Details

Part number NCE60P50
Manufacturer NCE Power Semiconductor
File Size 305.31 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE60P50 Datasheet

Full PDF Text Transcription for NCE60P50 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NCE60P50. For precise diagrams, and layout, please refer to the original PDF.

http://www.ncepower.com Pb Free Product NCE60P50 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P50 uses advanced trench technology and design to provid...

View more extracted text
tion The NCE60P50 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.