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NCE6602 Datasheet

Manufacturer: NCE Power Semiconductor

NCE6602 datasheet preview

Datasheet Details

Part number	NCE6602
Datasheet	NCE6602-NCEPowerSemiconductor.pdf
File Size	436.96 KB
Manufacturer	NCE Power Semiconductor
Description	N & P-Channel Enhancement Mode Power MOSFET

NCE6602 Overview

The NCE6602 uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other Switching application.

NCE6602 Key Features

N-Channel
VDS = 30V,ID = 3.5A
P-Channel VDS = -30V,ID = -2.7A RDS(ON) < 100mΩ @ VGS=-10V RDS(ON) < 150mΩ @ VGS=-4.5V
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage

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