n & p-channel enhancement mode power mosfet.
* N-Channel
* VDS = 30V,ID = 3.5A
RDS(ON) <58mΩ @ VGS=10V RDS(ON) < 95mΩ @ VGS=4.5V
* P-Channel VDS = -30V,ID = -2.7A RDS(ON) < 100mΩ @ VGS=-10V RDS(ON) < 150.
The NCE6602 uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other Switching application.
General Features
* N-Channel
* VDS = 30V,ID = 3.5A
RDS(ON) <.
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