Full PDF Text Transcription for NCE8651Q (Reference)
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http://www.ncepower.com Pb Free Product NCE8651Q NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8651Q uses advanced trench technology and design to provid...
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tion The NCE8651Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =20V,ID =10A RDS(ON) < 11mΩ @ VGS=4.5V RDS(ON) < 11.5mΩ @ VGS=4V RDS(ON) < 12.5mΩ @ VGS=3.1V RDS(ON) < 15.5mΩ @ VGS=2.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● 2.
NCE8651Q Datasheet
