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NCE8601B Datasheet N-Channel Enhancement Mode Power MOSFET

Manufacturer: NCE Power Semiconductor

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Datasheet Details

Part number NCE8601B
Manufacturer NCE Power Semiconductor
File Size 319.80 KB
Description N-Channel Enhancement Mode Power MOSFET
Download NCE8601B Download (PDF)

General Description

The NCE8601B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

It is ESD protested.

Overview

http://www.ncepower.com Pb Free Product NCE8601B NCE N-Channel Enhancement Mode Power.

Key Features

  • VDS = 30V,ID =8A RDS(ON) < 26mΩ @ VGS=4.5V RDS(ON) < 21mΩ @ VGS=10V ESD Rating: 2000V HBM.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package Schematic diagram Marking and pin Assignment.

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