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NCE8601B

Manufacturer: NCE Power Semiconductor

NCE8601B datasheet preview

Datasheet Details

Part number	NCE8601B
Datasheet	NCE8601B-NCEPowerSemiconductor.pdf
File Size	319.80 KB
Manufacturer	NCE Power Semiconductor
Description	N-Channel Enhancement Mode Power MOSFET

NCE8601B Overview

The NCE8601B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.

NCE8601B Key Features

VDS = 30V,ID =8A RDS(ON) < 26mΩ @ VGS=4.5V RDS(ON) < 21mΩ @ VGS=10V ESD Rating: 2000V HBM
High power and current handing capability
Lead free product is acquired
Surface mount package
PWM application
Load switch

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