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NCE8601B - N-Channel Enhancement Mode Power MOSFET

Product Overview

NCE Power Semiconductor

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NCE8601B N-Channel Enhancement Mode Power MOSFET by NCE Power Semiconductor - Datasheet Preview — Datasheet preview – NCE8601B

Datasheet Details

Part number	NCE8601B
Manufacturer	NCE Power Semiconductor
File Size	319.80 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE8601B Datasheet
Additional preview pages of the NCE8601B datasheet.

Product details

Description

The NCE8601B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

Features

VDS = 30V,ID =8A RDS(ON) < 26mΩ @ VGS=4.5V RDS(ON) < 21mΩ @ VGS=10V ESD Rating: 2000V HBM.
High power and current handing capability.
Lead free product is acquired.
Surface mount package Schematic diagram Marking and pin Assignment.

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Published: May 22, 2015 |