NCE8651Q Datasheet | NCE Power Semiconductor

http://.ncepower. Pb Free Product NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8651Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS =20V,ID =10A RDS(ON) < 11mΩ @ VGS=4.5V RDS(ON) < 11.5mΩ @ VGS=4V RDS(ON) < 12.5mΩ @ VGS=3.1V RDS(ON) < 15.5mΩ @ VGS=2.5V - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - 2.5V Drive - mon-drain type Schematic diagram Pin Assignment Application - Battery protection switch - Mobile device battery charging and discharging DFN 3x3 top view Package...