NCE8651Q - N-Channel Enhancement Mode Power MOSFET

Product Overview

NCE Power Semiconductor

Part number	NCE8651Q
Manufacturer	NCE Power Semiconductor
File Size	338.32 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE8651Q Datasheet
Additional preview pages of the NCE8651Q datasheet.

The NCE8651Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

VDS =20V,ID =10A RDS(ON) < 11mΩ @ VGS=4.5V RDS(ON) < 11.5mΩ @ VGS=4V RDS(ON) < 12.5mΩ @ VGS=3.1V RDS(ON) < 15.5mΩ @ VGS=2.5V.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
2.5V Drive.
Common-drain type Schematic diagram Pin Assignment.

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Published: Jun 2, 2018 |