NCEP026N10M Datasheet, NCE Power Semiconductor

NCEP026N10M mosfet equivalent, n-channel super trench ii power mosfet.

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Features and benefits

* VDS =100V,ID =200A RDS(ON)=2.4mΩ , typical (TO-220)@ VGS=10V RDS(ON)=2.2mΩ , typical (TO-263)@ VGS=10V
* Excellent gate charge x RDS(on) product(FOM)
* Very.

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NCE Power Semiconductor

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